MT4N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N2N
Caractéristiques
Technology ::
SDRAM - Mobile LPSDR
Product Category ::
Memory ICs
Memory Type ::
Volatile
Factory Stock ::
0
Write Cycle Time - Word, Page ::
15ns
Supplier Device Package ::
90-VFBGA (8x13)
Access Time ::
5.4ns
Memory Format ::
DRAM
Part Status ::
Obsolete
Memory Size ::
256Mb (8M x 32)
Packaging ::
Tape & Reel (TR)
@ qty ::
0
Operating Temperature ::
-40°C ~ 85°C (TA)
Minimum Quantity ::
1000
Memory Interface ::
Parallel
Package / Case ::
90-VFBGA
Mounting Type ::
Surface Mount
Clock Frequency ::
133MHz
Voltage - Supply ::
1.7 V ~ 1.95 V
Series ::
-
Manufacturer ::
Micron Technology
Introduction
Le MT48H8M32LFB5-75 IT:H TR,de Micron Technology,est des circuits intégrés de mémoire.Ce que nous offrons a un prix compétitif sur le marché mondial,qui sont en pièces originales et neuves.Si vous souhaitez en savoir plus sur les produits ou appliquer un prix inférieur, veuillez nous contacter via le chat en ligne ou envoyez-nous un devis!
Produits connexes

MT4d2d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d3d
IC DRAM 32G 1866MHZ FBGA

MT29F512G08CUCABH3-12IT :
IC FLASH 512G PARALLEL 83MHZ

MT41K512M8DA-093:P
IC DRAM 4G PARALLEL 78FBGA

Le nombre d'émissions de CO2 est déterminé par la méthode suivante:
IC FLASH 8M PARALLEL 64EASYBGA

MT4103M4103M4103M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4104M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M4105M410M410M410M410M410M410M4M410
IC DRAM 1G PARALLEL 90VFBGA

MT29F64G08CFACBWP-12Z : C TR
IC FLASH 64G PARALLEL 48TSOP I

Le nombre total d'équipements utilisés est de:
IC FLASH 1G PARALLEL 56TSOP

MT2F2G01ABAGDSF-IT:G
IC FLASH 2G SPI SOIC

MT29F2T08EMHAFJ4-3T: UN TR
IC FLASH 2T PARALLEL 333MHZ

MT2département d'État
IC FLASH 256M SPI 133MHZ 16SOP2
Envoyez le RFQ
Courant:
MOQ: